RFMD’s new family of Gallium Nitride- (GaN-) based line amplifiers for DOCSIS 3.1 can improve power efficiency, with up to 3dB higher output power than legacy technologies like Gallium Arsenide (GaAs) or silicon-based amplifiers. GaN also touts higher frequency response and the ability to maintain flat gain response, allowing new installs to reach longer distances with no sacrifice in distortion performance compared with GaAs or silicon. Associated power savings can amount to billions of watt hours per year. The use of GaN also reduces material waste and the energy needed to produce line amplifiers made from either Gallium Arsenide (GaAs) or silicon. Go Green!