Freescale Semiconductor is sampling its first RF power amplifier product built using gallium nitride (GaN) technology.

The Texas company’s RF power GaN products initially target the wireless-infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio.

Advantages of using GaN technology in power amplifiers, according to Freescale, include smaller product form factors, low parasitic loss, elevated power density and higher-frequency operation. Potential GaN cellular applications include quasi-linear, high efficiency (Doherty), high-powered pulsed (non-linear) applications, broadband PAs and switch-mode amplifier configurations.

Freescale’s first GaN product, the AFG25HW355S device, is a 350-watt, high-performance-in-package (HiP), 2:1 asymmetric device with the following features and performance targets:

>> 2.3 GHz-2.7 GHz,
>> 56 dBm peak power,
>> 50 percent efficiency,
>> 16 dB gain and
>> NI-780 packaging.

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